JPH0481336B2 - - Google Patents

Info

Publication number
JPH0481336B2
JPH0481336B2 JP57105411A JP10541182A JPH0481336B2 JP H0481336 B2 JPH0481336 B2 JP H0481336B2 JP 57105411 A JP57105411 A JP 57105411A JP 10541182 A JP10541182 A JP 10541182A JP H0481336 B2 JPH0481336 B2 JP H0481336B2
Authority
JP
Japan
Prior art keywords
emitter
region
polysilicon
forming
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57105411A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58222556A (ja
Inventor
Takahide Ikeda
Kyoshi Tsukuda
Mitsuru Hirao
Nobuaki Myagawa
Tokuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57105411A priority Critical patent/JPS58222556A/ja
Publication of JPS58222556A publication Critical patent/JPS58222556A/ja
Publication of JPH0481336B2 publication Critical patent/JPH0481336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57105411A 1982-06-21 1982-06-21 半導体装置の製造方法 Granted JPS58222556A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57105411A JPS58222556A (ja) 1982-06-21 1982-06-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57105411A JPS58222556A (ja) 1982-06-21 1982-06-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58222556A JPS58222556A (ja) 1983-12-24
JPH0481336B2 true JPH0481336B2 (en]) 1992-12-22

Family

ID=14406861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57105411A Granted JPS58222556A (ja) 1982-06-21 1982-06-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58222556A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0712064B2 (ja) * 1985-10-11 1995-02-08 松下電子工業株式会社 半導体集積回路の製造方法
DE3706278A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung und herstellungsverfahren hierfuer
JPH0734452B2 (ja) * 1986-07-24 1995-04-12 三菱電機株式会社 半導体集積回路装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939901B2 (ja) * 1978-12-28 1984-09-27 富士通株式会社 半導体装置の製造方法
JPS55157257A (en) * 1979-05-25 1980-12-06 Nec Corp Manufacture of mos integrated circuit
JPS567462A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS58222556A (ja) 1983-12-24

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